note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: pm0025a doc SPMR600-01 space level shunt module solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / spmr600 -01 __ screening 2 / __ = not screened tx = tx level txv = txv s = s level features: ? space level power supply applications ? compact and rugged construction offering weight and space savings ? very low mechanical stress and thermal resistance ? hermetic sealed discrete elements ? excellent thermal management ? tx, txv, and space level screening available 150v schottky section: maximum ratings symbol value units peak surge reverse voltage v rsm 150 v peak repetitive reverse voltage v rrm 150 v average rectified forward current (resistive load, 60 hz sine wave, t a = 25 c) i o i d2 40 a non-repetitive peak surge current (8.3 ms pulse, half sine wave) @ t c = 25c i fsm 600 a max. avalanche repetitive reverse current @ 1.5 x v rrm i ar 0.6 a non-repetitive avalanche energy @ i as = 6a l= 0.1 mh e as 0.6 mj total power dissipation @ t c = 25oc p d tbd w operating & storage temperature t op & t stg -55 to+175 c 150v schottky section: electrical characteristics symbol min typ max units instantaneous forward voltage drop (pulsed, t a = 25 oc) i f = 10adc i f = 20adc i f = 40adc v f1 v f2 v f3 ?? ?? ?? 0.650 0.715 0.775 0.75 0.80 0.85 v instantaneous forward voltage drop (pulsed, t a = 125 oc) i f = 10adc i f = 20adc i f = 40adc v f4 v f5 v f6 ?? ?? ?? 0.500 0.560 0.640 0.64 0.68 0.75 v instantaneous forward voltage drop (pulsed, t a = -55 oc) i f = 10adc i f = 20adc i f = 40adc v f7 v f8 v f9 ?? ?? ?? 0.800 0.840 0.925 0.90 0.96 1.03 v reverse leakage current (pulsed, t a = 25 oc) v r = 150 v ir 1 ?? 10 500 a reverse leakage current (pulsed, t a = 125 oc) v r = 150 v ir 2 ?? 5 50 ma reverse leakage current (pulsed, t a = 150 oc) v r = 150 v ir 3 ?? 10 ?? ma junction capacitance (t a = 25oc, f = 1mhz) v r = 10v c j ?? 1000 1250 pf notes: 1 / for ordering information, price, and availability- contact factory. 2 / screening based on mil-prf-19500. screening flows available on request.
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: pm0025a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPMR600-01 250v mosfet section: maximum ratings symbol value units drain - source voltage v dss 250 v gate ? source voltage continuous transient v gs 20 30 v max. continuous drain current (package limited) @ t c = 25oc @ t c = 125oc i d1 i d2 85 70 a pulsed drain (instantaneous) current (tj limited) @ t c = 25oc i d3 110 a max. avalanche current @ l= 0.1 mh i ar 25 a single / repetitive avalanche energy @ l= 0.1 mh e as 1000 mj total power dissipation @ t c = 25oc p d 250 w operating & storage temperature t op & t stg -55 to +150 oc 250v mosfet section: electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d = 250 a bv dss 250 ?? ?? v drain to source on state resistance v gs = 10v, i d = 55a, tj= 25 o c v gs = 10v, i d = 55a, tj=125 o c r ds(on) ?? ?? 24 45 28 ?? m ? gate threshold voltage v ds = v gs , i d = 1 ma, tj= 25 o c v ds = v gs , i d = 1 ma, tj= -55 o c v ds = v gs , i d = 1 ma, tj= 125 o c v gs(th) 2.5 ?? ?? 3.0 4.2 1.5 4.5 ?? ?? v gate to source leakage v gs = 20v, tj= 25 o c v gs = 20v, tj= 125 o c i gss ?? ?? 10 30 200 ?? na zero gate voltage drain current v ds = 250v, v gs = 0v, t j = 25 o c v ds = 250v, v gs = 0v, t j = 125 o c i dss ?? ?? 0.01 10 5 250 a a forward transconductance v ds = 10v, i d = 55a, t j = 25 o c g fs 50 100 ?? mho total gate charge gate to source charge gate to drain charge v gs = 10v v ds = 125v i d = 25a q g q gs q gd ?? ?? ?? 160 40 50 ?? ?? ?? nc turn on delay time rise time turn off delay time fall time v gs = 15v v ds = 125v i d = 55a r g = 2.0 ? , pw= 3us t d(on) t r t d(off) t f ?? ?? ?? ?? 20 30 60 30 ?? ?? ?? ?? nsec diode forward voltage i f = 55a, v gs = 0v v sd ?? 0.9 1.2 v diode reverse recovery time peak reverse recovery current reverse recovery charge i f = 55a, di/dt = 250a/usec t rr i rm(rec) q rr ?? ?? ?? 175 27 2.5 ?? ?? ?? nsec a c input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 9400 850 60 ?? ?? ?? pf
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: pm0025a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPMR600-01 case outline: aspm
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